面向工程应用的单片机课程教学改革与实践

在分析传统单片机教学存在问题的基础上,提出面向工程应用,聚焦企业需要,构建能力递进、面向应用的内容体系,搭建资源共享、实践创新、师生互动的自主学习平台,组建培养兴趣,突出技能的“双师型”教学团队,实践表明,在传授知识的同时,能有效提升学习兴趣,优化人才素质结构。     

Influences of chip serration on micro-topography of machined surface in high-speed cutting

Saw-tooth chip changes from macroscopically continuous ribbon to separated segments with the increase of cutting speed. The aim of this study is to find the correlations between chip morphology and machined surface micro-topography at different chip serration stages encountered in high speed cutting. High strength alloy steel AerMet100 was employed in orthogonal cutting experiments to obtain chips at different serration stages and corresponding machined surfaces. The chips and machined surfaces obtained were then examined with optical microscope (OM), scanning electron microscope (SEM), and white light interferometer (WLI). The result shows that chip serration causes micro-waves on machined surface, which increases machined surface roughness. However, wave amplitudes (surface roughness) at different serration stages are different. The principal factor influencing wave amplitude is the thickness of the sawed segment (tooth) of saw-tooth chip. With cutting parameters in this study, surface roughness contributed by chip serration ranges from 0.39 μm to 1.85 μm. This may bring on serious problems in the case of trying to replace grinding with high-speed cutting in rough machining. Some suggestions have been proposed to control the chip serration-caused surface roughness in high-speed cutting based on the results of the current study.     

面向流屑角突变建模的切削状态参数经验公式的获得及应用

从提高流屑角突变模型的预测精度出发,建立了切削状态参数与3个切削控制参数之间关系的新经验公式。提出了一种通过迭代法准确设定有限元仿真软件刀-屑摩擦因数的方法,并通过直角切削Al6061-T6工件的有限元仿真试验,获得了一组不同切削控制参数组合条件下的切削状态参数数据。根据该数据拟合出剪切角φ、刀-屑摩擦角β、剪切应力τs关于刀具前角γ0、进给量f和切削速度v的经验公式,并通过一组直角切削试验,验证了所得经验公式的有效性。将新建经验公式应用于流屑角突变建模过程后,所得模型关于突变临界切削宽度的平均预测误差减小了27.2%。     

Low-cost and two-cycle hardware structures of PRINCE lightweight block cipher

In this paper, low-cost and two-cycle hardware structures of the PRINCE lightweight block cipher are presented. In the first structure, we proposed an area-constrained structure, and in the second structure, a high-speed implementation of the PRINCE cipher is presented. The substitution box (S-box) and the inverse of S-box (S-box⁻¹) blocks are the most complex blocks in the PRINCE cipher. These blocks are designed by an efficient structure with low critical path delay. In the low-cost structure, the S-boxes and S-boxes⁻¹ are shared between the round computations and the intermediate step of PRINCE cipher. Therefore, the proposed architecture is implemented based on the lowest number of computation resources. The two-cycle implementation of PRINCE cipher is designed by a processing element (PE), which is a general and reconfigurable element. This structure has a regular form with the minimum number of the control signal. Implementation results of the proposed structures in 180-nm CMOS technology and Virtex-4 and Virtex-6 FPGA families are achieved. The proposed structures, based on the results, have better critical path delay and throughput compared with other's related works.     

2.5GHz低相位噪声CMOS LC VCO的设计

用0 .35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2 .5 GHz L C VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/ f噪声的影响.为了减少高频噪声的影响,采用了在片L C滤波技术.可变电容采用增强型MOS可变电容,取得了2 3%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处- 118d Bc/ Hz的相位噪声性能.电源电压为3.3V时的功耗为4 m A.     

串行16位DAC转换芯片在流量手操器中的应用

本文介绍串行16位D／A转换芯片MAX541及其与AT89C52单片机的接口电路、相应的转换子程序，并给出其在过程流量手操器中的应用。     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

双层悬空结构片状微电感研究

利用MEMS工艺制作了一种双层悬空结构的圆形片状微电感，并研究了其在S波段的性能。双层微电感的底层线圈制作在玻璃衬底平面上，外径为500μm，匝数为2，导线宽度70μm，导线间距15μm，顶层线圈的悬空高度为20μm，顶层线圈的匝数为1．5，其它结构参数与底层线圈相同。研究表明，所制作的双层结构微电感在2GHz～4GHz时其电感量达到2．2nH，其品质因数达到22。在制作过程中首次引入的光刻胶抛光工艺大大简化了微电感的制作过程。     

采用自动双探边器降低芯片漏测率

半导体芯片的检测是芯片生产企业生产过程中的重要环节，芯片在检测过程中，由于圆形硅片的结构特点而造成的漏测又是困扰芯片生产企业不可小视的实际问题。本文介绍了利用双探边器解决由于硅圆片结构所造成的漏测的有效办法及具体操作方法。